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IRF430 - N-Channel MOSFET Transistor

Description

silicon Gate for fast switching at elevate rugged low drive requirements ease of paralleling Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications such as Switching power supplies,AC and DCmotor controls

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF430 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4.5 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
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