Datasheet4U Logo Datasheet4U.com

IRF123 N-Channel MOSFET Transistor

IRF123 Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF123 .
Drain Current ID=7A@ TC=25℃. Drain Source Voltage- : VDSS= 60V(Min). Static Drain-Source On-Resistance : RDS(on) =0. Nanoseco.

IRF123 Applications

* Switching power supplies
* Motor controls,Inverters and Choppers
* Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 60 ±20 V V Drain Current-cont

📥 Download Datasheet

Preview of IRF123 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF123
Manufacturer
Inchange Semiconductor
File Size
42.51 KB
Datasheet
IRF123-InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

📁 Related Datasheet

  • IRF120 - N-CHANNEL POWER MOSFET (Samsung semiconductor)
  • IRF1205 - HEXFET Power MOSFET (International Rectifier)
  • IRF121 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF122 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF100 - HIGH POWER WIRE WOUND RESISTORS (ETC)
  • IRF100B201 - Power MOSFET (International Rectifier)
  • IRF100B202 - Power MOSFET (International Rectifier)
  • IRF100P218 - MOSFET (Infineon)

📌 All Tags

N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor IRF123-like datasheet