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D864 - 2SD864

D864 Description

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD864 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Low Collector-Emitter Sat.

D864 Applications

* Medium speed and power switching applications. i. cnABSOLUTE MAXIMUM RATINGS (Ta=25℃) . iscsemSYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V wwwVCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Curren

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2SD864 Inchange Semiconductor
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