D649 2SD649

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 .
High Breakdown Voltage: VCBO= 1500V (Min). High Reliability APPLICATIONS. Designed for line-operated horizontal deflection output applic.

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Datasheet Specifications

Part number: D649
Manufacturer: Inchange Semiconductor
File Size: 206.19 KB
Datasheet: D649-InchangeSemiconductor.pdf
Description: 2SD649

Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C www. DataSheet4U. com I Collector Current- Continuous w w s c s i .

D649 Distributors

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D649 2SD649 Inchange Semiconductor

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