D363 2SD363

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min). Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS. Designed for.

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Datasheet Specifications

Part number: D363
Manufacturer: Inchange Semiconductor
File Size: 116.85 KB
Datasheet: D363-InchangeSemiconductor.pdf
Description: 2SD363

Applications

* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipa

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D363 2SD363 Inchange Semiconductor

Inchange Semiconductor D363-like datasheet