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D363 2SD363

D363 Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min). Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS. Designed for.

D363 Applications

* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipa

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2SD363 Inchange Semiconductor
Inchange Semiconductor D363-like datasheet