Datasheet4U Logo Datasheet4U.com

D2110 2SD2110

D2110 Description

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

D2110 Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i. cnSYMBOL PARAMETER VALUE UNIT . iscsemVCBO Collector-Base Voltage 80 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Collector

📥 Download Datasheet

Preview of D2110 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • D2111 - 2SD2111 (Hitachi Semiconductor)
  • D2114 - (D2114 / D2115) RAM (Intel)
  • D2115 - (D2114 / D2115) RAM (Intel)
  • D2118 - 2SD2118 (Rohm)
  • D2100 - 2SD2100 (Sanyo Semicon Device)
  • D2101 - 2SD2101 (Hitachi Semiconductor)
  • D2101S - Thyristors / Rectifiers (RCA)
  • D2102 - 2SD2102 (Hitachi Semiconductor)

📌 All Tags

2SD2110 Inchange Semiconductor
Inchange Semiconductor D2110-like datasheet