D1670 2SD1670

Inchange Semiconductor

Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min). High DC Current Gain: hFE= 1000( Min. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: D1670
Manufacturer: Inchange Semiconductor
File Size: 247.30 KB
Datasheet: D1670-InchangeSemiconductor.pdf
Description: 2SD1670

Applications

* For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Di

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D1670 2SD1670 Inchange Semiconductor

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