BUZ101 - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	BUZ101
Manufacturer	Inchange Semiconductor
File Size	288.35 KB
Description	N-Channel MOSFET Transistor
Datasheet	BUZ101-InchangeSemiconductor.pdf

BUZ101 Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pluse 116 A PD Total Dissipation @TC=25℃ 100 W TJ Max.Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junct

Features

Drain Current : ID= 29A@ TC=25℃.
Drain Source Voltage : VDSS= 50V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Sep 14, 2022 |