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BUY55 Silicon NPN Power Transistor

BUY55 Description

isc Silicon NPN Power Transistor BUY55 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min. Low Collector Saturation Voltage- : VCE(sat)= 1. Mini.

BUY55 Applications

* Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCES Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 6 V IC Collector

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Datasheet Details

Part number
BUY55
Manufacturer
Inchange Semiconductor
File Size
202.37 KB
Datasheet
BUY55-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUY55-like datasheet