Datasheet4U Logo Datasheet4U.com

BUV82 - Silicon NPN Power Transistor

BUV82 Description

isc Silicon NPN Power Transistors BUV82/83 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83. High Switching Speed. Minimum Lot-to-Lot variation.

BUV82 Applications

* Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 BUV82 850 V BUV83 1000 BUV82 400 VCEO Collector-Emitter Voltage

📥 Download Datasheet

Preview of BUV82 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BUV82
Manufacturer
Inchange Semiconductor
File Size
220.16 KB
Datasheet
BUV82_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package (Seme LAB)
  • BUV11 - 20 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
  • BUV12 - Bipolar NPN Device (Seme LAB)
  • BUV18 - NPN High Current Switching Transistors (ST Microelectronics)
  • BUV18X - Bipolar NPN Device (Seme LAB)
  • BUV19 - NPN HIGH CURENT SWITCHING TRANSISTORS (Seme LAB)
  • BUV20 - NPN Transistor (Motorola Inc)
  • BUV21 - 40 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUV82-like datasheet