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BUV51 - Silicon NPN Power Transistor

BUV51 Description

isc Silicon NPN Power Transistor BUV51 .
High Current Capability. Low Collector Saturation Voltage- : VCE(sat)= 0. High Switching Speed. Minimum Lot-to-Lot.

BUV51 Applications

* Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage (VBE= -1.5V) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Bas

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Datasheet Details

Part number
BUV51
Manufacturer
Inchange Semiconductor
File Size
205.30 KB
Datasheet
BUV51-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUV51-like datasheet