Datasheet4U Logo Datasheet4U.com

BUV39 - Silicon NPN Power Transistor

BUV39 Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV39 .
Low Collector Saturation Voltage: VCE(sat)= 0. High Switching Speed APPLICATIONS. Designed for high current, high sp.

BUV39 Applications

* Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=-1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Cont

📥 Download Datasheet

Preview of BUV39 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BUV39
Manufacturer
Inchange Semiconductor
File Size
111.76 KB
Datasheet
BUV39_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BUV37 - POWER TRANSISTORS (Mospec Semiconductor)
  • BUV10N - Bipolar NPN Device in a Hermetically sealed TO3 Metal Package (Seme LAB)
  • BUV11 - 20 AMPERES NPN SILICON POWER METAL TRANSISTOR (Motorola Inc)
  • BUV12 - Bipolar NPN Device (Seme LAB)
  • BUV18 - NPN High Current Switching Transistors (ST Microelectronics)
  • BUV18X - Bipolar NPN Device (Seme LAB)
  • BUV19 - NPN HIGH CURENT SWITCHING TRANSISTORS (Seme LAB)
  • BUV20 - NPN Transistor (Motorola Inc)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUV39-like datasheet