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BU607D - Silicon NPN Power Transistor

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Datasheet Details

Part number BU607D
Manufacturer Inchange Semiconductor
File Size 207.48 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BU607D_InchangeSemiconductor.pdf

BU607D Product details

Description

High Voltage: VCEV= 330V(Min) Fast Switching Speed- : tf= 0.75μs(Max) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 2

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