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BU134 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 3A High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV receiver

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receiver’s chopper supply.
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