BU104 - Silicon NPN Power Transistor

Inchange Semiconductor

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Datasheet Details

Part number	BU104
Manufacturer	Inchange Semiconductor
File Size	207.87 KB
Description	Silicon NPN Power Transistor
Datasheet	BU104_InchangeSemiconductor.pdf

BU104 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflexion output stage of B/W TV receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VCEX Collector-Emitter Voltage VBE=

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Published: Jan 9, 2012 |