Datasheet Details
- Part number
- BDY55X
- Manufacturer
- Inchange Semiconductor
- File Size
- 207.40 KB
- Datasheet
- BDY55X-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
BDY55X Description
isc Silicon NPN Power Transistor BDY55X .
Excellent Safe Operating Area.
DC Current Gain-
: hFE=20-100@IC = 4A.
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
BDY55X Applications
* Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base
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