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BDS12 - Silicon NPN Power Transistor

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Datasheet Details

Part number BDS12
Manufacturer Inchange Semiconductor
File Size 210.78 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDS12-InchangeSemiconductor.pdf

BDS12 Product details

Description

High Voltage: VCEV= 100V(Min) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching application and General puepose power.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEV Collector-Emitter Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage

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