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BD684 - Silicon PNP Power Transistor

BD684 Description

isc Silicon PNP Darlington Power Transistor BD684 .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -120V. DC Current Gain. : hFE = 750(Min) @ IC= -1. Compleme.

BD684 Applications

* Designed for audio and video output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Curren

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Datasheet Details

Part number
BD684
Manufacturer
Inchange Semiconductor
File Size
189.89 KB
Datasheet
BD684-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor BD684-like datasheet