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BD550B - Silicon NPN Power Transistors

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Datasheet Details

Part number BD550B
Manufacturer Inchange Semiconductor
File Size 182.55 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet BD550B-InchangeSemiconductor.pdf

BD550B Product details

Description

High Power Dissipation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as either driver or output unit applications in audio amplifier circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter-Base Volt

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