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BD245D - Silicon NPN Power Transistor

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Datasheet Details

Part number BD245D
Manufacturer Inchange Semiconductor
File Size 217.30 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BD245D-InchangeSemiconductor.pdf

BD245D Product details

Description

Excellent Safe Operating Area DC Current Gain- : hFE>40@IC = 1A Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A Designed for Complementary Use with the BD246D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter

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