BD107 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Specifications

Part number: BD107
Manufacturer: Inchange Semiconductor
File Size: 206.62 KB
Datasheet: BD107-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power

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