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APT13005SU-G1 - Silicon NPN Power Transistor

Description

High Collector-Emitter Voltage : VCES= 700V(Min.) Fast Switching Speed Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Battery charges for Mobile Phone of BCD Sol

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isc Silicon NPN Power Transistor isc Product Specification APT13005SU-G1 DESCRIPTION · High Collector-Emitter Voltage : VCES= 700V(Min.) ·Fast Switching Speed ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges for Mobile Phone of BCD Solution ·Power supply for DVD/STB of BCD Solution ·Driver for LED Lighting of BCD Solution ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 3.2 A ICM Collector Current-Peak 6.
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