4N10 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: 4N10
Manufacturer: Inchange Semiconductor
File Size: 227.29 KB
Datasheet: 4N10-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Features

* Drain Current ID= 4A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching power supplies,converters,AC and DC motor controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 16 A PD

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📁 Related Datasheet

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4N10 N-Channel MOSFET Transistor Inchange Semiconductor

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