Datasheet4U Logo Datasheet4U.com

2SK1982 - N-Channel MOSFET Transistor

Description

Drain Current ID= 10A@ TC=25℃ Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MA

📥 Download Datasheet

📁 Similar Datasheet

  • 2SK1982-01M - N-Channel MOSFET (INCHANGE)
  • 2SK1982-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
  • 2SK198 - Silicon N-Channel MOSFET (Panasonic Semiconductor)
  • 2SK1981 - N-Channel MOSFET (INCHANGE)
  • 2SK1981-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK1983 - N-Channel MOSFET (INCHANGE)
  • 2SK1983-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK1984 - N-Channel MOSFET (INCHANGE)
  • 2SK1984-01MR - N-channel MOS-FET (Fuji Electric)
  • 2SK1985 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.
Published: |