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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high voltage,high speed applications,
such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
13
A
Ptot
Total Dissipation@TC=25℃
85
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c
Thermal Resistance,Junction to Case
1.
2SK1652 Datasheet
