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2SD568 - Silicon NPN Power Transistor

Description

High Collector Current:: IC= 7A Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A Complement to Type 2SB707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed s

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isc Silicon NPN Power Transistor 2SD568 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type 2SB707 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.
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