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2SD476N - Silicon NPN Power Transistor

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Datasheet Details

Part number 2SD476N
Manufacturer Inchange Semiconductor
File Size 208.01 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD476N-InchangeSemiconductor.pdf

2SD476N Product details

Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC=2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM

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