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2SD363 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD363 isc website：www.iscsemi.
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