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2SD1500 - Power Transistor

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2SD1500 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 10A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications.

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