Datasheet4U Logo Datasheet4U.com

2SC5480 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SC5480 - Silicon NPN Triple Diffused Planar Transistor (Hitachi Semiconductor)
  • 2SC5482 - NPN TRANSISTOR (ETC)
  • 2SC5484 - NPN TRANSISTOR (ETC)
  • 2SC5485 - NPN Transistor (ETC)
  • 2SC5488 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5488A - RF Transistor (ON Semiconductor)
  • 2SC5489 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SC5404 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC5404 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC5404 - NPN Transistor (INCHANGE)
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 28 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
Published: |