Click to expand full text
isc Silicon NPN RF Transistor
DESCRIPTION · High gain bandwidth product
fT = 9 GHz (Typ) @ VCE=5V,IC=20mA,f=0.9GHz · High gain, low noise figure
︱S21e︱2 = 13.5 dB @ VCE=5V,IC=20mA,f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V,IC=5mA, f=0.9GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·UHF / VHF wide band amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
15
V
VCEO
Collector-Emitter Voltage
9
V
VEBO
Emitter-Base voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
50
mA
100
mW
150
℃
Tstg
Storage Temperature Range
-65~150
℃
2SC4901
isc website:www.iscsemi.