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2SC4766 - Silicon NPN Transistor

Description

High Breakdown Voltage- : VCBO= 1700V (Min) High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for med

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4766 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display.
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