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2SC3421 - Silicon NPN Power Transistor

Description

High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) Complement to Type 2SA1358 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio frequency power amplifier applications.

Suitable for driver of 60 to

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isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.1 A 10 W 1.
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