Datasheet4U Logo Datasheet4U.com

2SC3198 - Silicon NPN Power Transistor

Description

High DC Current Gain-hFE=70-700@IC = 2mA Excellent hFE Linearity Excellent Safe Operating Area Low Noise Complement to Type 2SA1266 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Low Frequency Amplifiers.

Low No

📥 Download Datasheet

📁 Similar Datasheet

  • 2SC3198 - Transistors (Korea Electronics)
  • 2SC3198 - NPN Silicon Transistor (SEMTECH)
  • 2SC3190 - Transistor (Korea Electronics)
  • 2SC3192 - NPN Transistor (TIP)
  • 2SC3194 - NPN Transistor (TIP)
  • 2SC3195 - NPN Silicon Epitaxial Planar Transistor (PACO)
  • 2SC3197 - NPN Transistor (CDIL)
  • 2SC3199 - SILICON NPN TRANSISTOR (ETC)
  • 2SC3199 - (2SCxxxx) TRANSISTOR (Korea Electronics)
  • 2SC3199 - NPN Silicon Transistor (BLUECOLOUR)
Other Datasheets by Inchange Semiconductor
  • 2SC3121 - Silicon NPN RF Transistor
  • 2SC3122 - Silicon NPN RF Transistor
  • 2SC3123 - Silicon NPN RF Transistor
  • 2SC3124 - Silicon NPN RF Transistor
  • 2SC3125 - Silicon NPN RF Transistor
  • 2SC3127 - Silicon NPN RF Transistor
  • 2SC3130 - Silicon NPN RF Transistor
  • 2SC3085 - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·Complement to Type 2SA1266 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low Frequency Amplifiers. ·Low Noise Amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC3198 VALUE UNIT 60 V 50 V 5V 150 mA 400 mW 125 ℃ -55~125 ℃ isc website：www.iscsemi.
Published: |