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2SC1970 - Silicon NPN Power Transistor

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Datasheet Details

Part number 2SC1970
Manufacturer Inchange Semiconductor
File Size 191.18 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SC1970_InchangeSemiconductor.pdf

2SC1970 Product details

Description

High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage RBE= ∞ 17 V VEBO Emitter-Base Voltage 4 V IC Collector Current

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