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2SB855 - Silicon PNP Power Transistor

Description

Collector Current: IC= -2A Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier application

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isc Silicon PNP Power Transistor 2SB855 DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 20 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.
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