2SB834 - Silicon PNP Power Transistors

Inchange Semiconductor

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Datasheet Details

Part number	2SB834
Manufacturer	Inchange Semiconductor
File Size	218.17 KB
Description	Silicon PNP Power Transistors
Datasheet	2SB834_InchangeSemiconductor.pdf

2SB834 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A Complementary to 2SD880 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Em

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Published: Nov 28, 2011 |