Datasheet4U Logo Datasheet4U.com

2SA959 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose applications.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SA959 - Silicon POwer Transistors (SavantIC)
  • 2SA950 - TRANSISTOR (Toshiba Semiconductor)
  • 2SA950 - PNP Transistor (SeCoS)
  • 2SA950 - Plastic-Encapsulated Transistors (TRANSYS Electronics)
  • 2SA950 - PNP Transistor (SEMTECH)
  • 2SA950 - PNP Transistor (KOO CHIN)
  • 2SA950 - PNP Transistor (DC COMPONENTS)
  • 2SA950 - PNP Silicon Transistor (Bluecolour)
  • 2SA950 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SA952 - PNP SILICON TRANSISTOR (NEC)
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature -65~200 ℃ 2SA959 isc website：www.iscsemi.
Published: |