Datasheet4U Logo Datasheet4U.com

2SA2151 - POWER TRANSISTOR

📥 Download Datasheet

Preview of 2SA2151 PDF
datasheet Preview Page 2

2SA2151 Product details

Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC6011 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuou

📁 2SA2151 Similar Datasheet

  • 2SA2151A - Audio Amplification Transistor (Sanken)
  • 2SA2153 - PNP Epitaxial Planar Silicon Transistor (Sanyo Electric)
  • 2SA2154 - Silicon PNP Transistor (Toshiba)
  • 2SA2154CT - Silicon PNP Transistor (Toshiba)
  • 2SA2154MFV - Silicon PNP Transistor (Toshiba)
  • 2SA2101 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SA2102 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SA2112 - PNP Transistors (Sanyo Semicon Device)
Other Datasheets by Inchange Semiconductor
  • 2SA2121 - Silicon PNP Power Transistor
  • 2SA2126 - Silicon PNP Power Transistor
  • 2SA2140 - Silicon PNP Power Transistor
  • 2SA2169 - Silicon PNP Power Transistor
  • 2SA2031 - Power Transistor
  • 2SA2039 - Silicon PNP Power Transistor
Published: |