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2SA1387 - POWER TRANSISTOR

Description

High DC Current Gain- : hFE= 150(Min.) @ IC= -1A High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applica

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isc Silicon PNP Power Transistor 2SA1387 DESCRIPTION ·High DC Current Gain- : hFE= 150(Min.) @ IC= -1A ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.
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