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2SA1383 - POWER TRANSISTOR

Description

TO-220 package High Collector-Emitter Breakdown Voltage Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.1 A Total Power Dissipation @TC=25℃ 10 PT W Total Power Dissipation @Ta=25℃ 1.5 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1383 isc website： www.iscsemi.
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