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2SA1332 - POWER TRANSISTOR

Description

Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power power amplifier applications.

Driver stage amplifier applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.15 A 2 W 20 150 ℃ -55~150 ℃ 2SA1332 isc website： www.iscsemi.
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