2SA1262 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1262 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. Low Collector Saturation Voltage : VCE(sat)= -0. Complement.

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Datasheet Specifications

Part number: 2SA1262
Manufacturer: Inchange Semiconductor
File Size: 214.35 KB
Datasheet: 2SA1262_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Peak

2SA1262 Distributors

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2SA1262 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1262-like datasheet