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2SA1120 - POWER TRANSISTOR

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V (Min) Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= 0.1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobo flash applications Audio power amplifer app

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isc Silicon PNP Power Transistor 2SA1120 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= 0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobo flash applications ·Audio power amplifer applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IE Emitter Current-Continuous 5 A IEM Emitter Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1.
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