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2N5930 - Silicon NPN Power Transistors

The 2N5930 by Inchange Semiconductor is a Silicon NPN Power Transistors. Below is the official datasheet preview.

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Official preview page of the 2N5930 Silicon NPN Power Transistors datasheet (Inchange Semiconductor).

Datasheet Details

Part number 2N5930
Manufacturer Inchange Semiconductor
File Size 134.88 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2N5930-InchangeSemiconductor.pdf
Additional preview pages of the 2N5930 datasheet.

2N5930 Product details

Description

DC Current Gain- : hFE= 20-100@IC= 10A Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS Designed for general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 175

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