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MIXA80WB1200TEH - IGBT

Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
MIXA80W1200TED XPT IGBT
MIXA80W1200TEH XPT IGBT
MIXA80R1200VA XPT IGBT
MIXA81H1200EH IGBT Module
MIXA81WB1200TEH XPT IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Converter - Brake - Inverter Module XPT IGBT MIXA80WB1200TEH Three Phase Rectifier Brake Three Phase Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 265 A IC25 = 60 A IC25 = 120 A IFSM = 1100 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product) MIXA80WB1200TEH E72873 Pin configuration see outlines. 21 22 D11 D13 D15 D7 7 1 23 16 T1 15 D1 18 17 6 D3 T3 20 19 5 D5 T5 4 D12 D14 D16 14 T7 11 10 D2 T2 12 D4 T4 13 T6 D6 23 24 NTC 8 9 Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
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