IXXX140N65B4H1 Datasheet (IXYS)

IXXX140N65B4H1, 650V IGBT

XPTTM 650V IGBT GenX4TM w/Sonic Diode Extreme Light Punch Through IGBT for 10-30kHz Switching IXXX140N65B4H1 VCES = 650V I = 140A C110 V  1.90V CE(sat) tfi(typ) = 44ns Symbol VCES V CGR VGES VGEM I C25 ILRMS IC110 IF110 I CM SSOA (RBSOA) t sc (SCSOA) P C TJ TJM T stg T L FC Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V T = 25°C (Chip Capability) C Terminal Current Limit TC =

IXXX140N65B4H1 Features

* Optimized for 10-30kHz Switching

* Square RBSOA

* Short Circuit Capability

* Anti-Parallel Sonic Diode

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters