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IXXR110N65B4H1 - 650V IGBT

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 2500V~ Electrical Isolation.
  • Optimized for 10-30kHz Switching.
  • Square RBSOA.
  • Short Circuit Capability.
  • Anti-Parallel Sonic Diode.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPTTM 650V GenX4TM IXXR110N65B4H1 w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC110 = 70A V CE(sat)  2.10V tfi(typ) = 43ns ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient Maximum Ratings 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms 165 A 70 A 48 A 490 A VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 A @VCE  VCES VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs TC = 25°C 455 W -55 ... +175 °C 175 °C -55 ...
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