IXXH30N65C4D1 - Extreme Light Punch Through IGBT

Datasheet Details

Part number	IXXH30N65C4D1
Manufacturer	IXYS
File Size	225.69 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXXH30N65C4D1-IXYS.pdf

Optimized for 20-60kHz Switching.
Square RBSOA.
Anti-Parallel Diode.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteri.

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Published: Feb 11, 2025 |