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IXTP42N15T - Power MOSFET

Download the IXTP42N15T datasheet PDF. This datasheet also covers the IXTA42N15T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages z 175°C Operating Temperature z Avalanche rated Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA42N15T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTP42N15T N-Channel MOSFET INCHANGE
IXTP42N25P Power MOSFET IXYS Corporation
IXTP44N10T N-Channel MOSFET INCHANGE
IXTP44N10T Power MOSFET IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP44P15T Power MOSFET
IXTP450P2 Power MOSFETs
IXTP460P2 Power MOSFET
IXTP48N20T Power MOSFET
IXTP48P05T Power MOSFET

Full PDF Text Transcription

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TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150V 42A 45mΩ TO-263 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS RDS(on) VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 Maximum Ratings 150 V 150 V ± 30 V 42 A 100 A 5 A 400 mJ 200 W -55 ...
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